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| savantic semiconductor product specification silicon pnp power transistors 2SB757 d escription with to-3pn package high collector current wide area of safe operation complement to type 2sd847 applications audio amplifications serie regulators general purpose power amplifiers pinning pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings (t c =25) symbol parameter conditions value unit v cbo collector-base voltage open emitter -40 v v ceo collector-emitter voltage open base -40 v v ebo emitter-base voltage open collector -5 v i c collector current -15 a i b base current -5 a p c collector power dissipation t c =25 80 w t j junction temperature 150 t stg storage temperature -55~150 thermal characteristics symbol parameter value unit r th j-c thermal resistance from junction to case 1.56 /w fig.1 simplified outline (to-3pn) and symbol
savantic semiconductor product specification 2 silicon pnp power transistors 2SB757 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)cbo collector-base breakdown voltage i c =-0.1ma; i e =0 -40 v v (br)ceo collector-emitter breakdown voltage i c =-10ma; i b =0 -40 v v (br)ebo emitter-base breakdown voltage i e =-0.1ma; i c =0 -5 v v ce (sat) collector-emitter saturation voltage i c =-5a; i b =-0.5a -0.8 v v be (sat) base-emitter saturation voltage i c =-5a; i b =-0.5a -1.8 v i cbo collector cut-off current v cb =-40v; i e =0 -10 a i ebo emitter cut-off current v eb =-5v; i c =0 -100 a h fe dc current gain i c =-5a ; v ce =-2v 40 240 switching times t on turn-on time 1.0 s t s storage time 2.0 s t f fall time i c =-15a;i b1 =-i b2 =-1.5a r l =2 @ ;p w =20s,duty b 2% 1.0 s savantic semiconductor product specification 3 silicon pnp power transistors 2SB757 package outline fig.2 outline dimensions |
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